IGBTHighspeed5FASTIGBTinTRENCHSTOPTM5technology
IGW50N65F5650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
2
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Highspeed5FASTIGBTinTRENCHSTOPTM5technologyFeaturesandBenefits:
HighspeedF5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•650Vbreakdownvoltage•LowQG•IdealfitwithSICSchottkyDiodeinboostconverters•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•Solarconverters•Uninterruptiblepowersupplies•Weldingconverters•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate•Pin2&backside-collector•Pin3-emitter
G
C
E
GC
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIGW50N65F5 650V 50A 1.6V 175°C G50EF5 PG-TO247-3
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IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C
IC 80.056.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±30 V
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
305.0152.5 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 0.50 K/W
Thermal resistancejunction - ambient Rth(j-a) 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0ATvj=25°CTvj=125°CTvj=175°C
---
1.601.801.90
2.10--
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C
--
--
40.02000.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
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IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes - 50 -
Reverse transfer capacitance Cres - 11 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=50.0A,VGE=15V - 120.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 21 - ns
Rise time tr - 15 - ns
Turn-off delay time td(off) - 175 - ns
Fall time tf - 18 - ns
Turn-on energy Eon - 0.49 - mJ
Turn-off energy Eoff - 0.16 - mJ
Total switching energy Ets - 0.65 - mJ
Tvj=25°C,VCC=400V,IC=25.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Turn-on delay time td(on) - 19 - ns
Rise time tr - 4 - ns
Turn-off delay time td(off) - 195 - ns
Fall time tf - 10 - ns
Turn-on energy Eon - 0.11 - mJ
Turn-off energy Eoff - 0.04 - mJ
Total switching energy Ets - 0.15 - mJ
Tvj=25°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
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IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 20 - ns
Rise time tr - 15 - ns
Turn-off delay time td(off) - 202 - ns
Fall time tf - 3 - ns
Turn-on energy Eon - 0.68 - mJ
Turn-off energy Eoff - 0.21 - mJ
Total switching energy Ets - 0.89 - mJ
Tvj=150°C,VCC=400V,IC=25.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Turn-on delay time td(on) - 18 - ns
Rise time tr - 5 - ns
Turn-off delay time td(off) - 245 - ns
Fall time tf - 12 - ns
Turn-on energy Eon - 0.18 - mJ
Turn-off energy Eoff - 0.06 - mJ
Total switching energy Ets - 0.24 - mJ
Tvj=150°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
7
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V.RecommendeduseatVGE≥7.5V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,POWERDISSIPATION[W
]
25 50 75 100 125 150 1750
30
60
90
120
150
180
210
240
270
300
Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLECTO
RCURRENT[A]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
Figure 4. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 4 50
15
30
45
60
75
90
105
120
135
150
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
8
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Figure 5. Typicaloutputcharacteristic(Tvj=150°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 4 50
15
30
45
60
75
90
105
120
135
150
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 6. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150Tj=25°CTj=150°C
Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat ,COLLECTO
R-EMITTE
RSATU
RATION[V
]
0 25 50 75 100 125 150 1750.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50IC=12,5AIC=25AIC=50A
Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=12Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 30 60 90 120 1501
10
100
1000td(off)
tftd(on)
tr
9
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Figure 9. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=25A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 75 851
10
100
1000td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=25A,rG=12Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 1751
10
100
1000td(off)
tftd(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GATE
-EMITTE
RTHRESHOLD
VOLTAGE[V
]
0 25 50 75 100 125 1501.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0typ.min.max.
Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=12Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENERGYLOSSES[m
J]
0 30 60 90 120 1500
1
2
3
4
5
6
7
8
9
10
11Eoff
Eon
Ets
10
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=25A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
E,S
WITCHINGENERGYLOSSES[m
J]
5 15 25 35 45 55 65 75 850.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=25A,rG=12Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENERGYLOSSES[m
J]
25 50 75 100 125 150 1750.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=25A,rG=12Ω,DynamictestcircuitinFigure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENERGYLOSSES[m
J]
200 250 300 350 400 450 5000.0
0.2
0.4
0.6
0.8
1.0
1.2Eoff
Eon
Ets
Figure 16. Typicalgatecharge(IC=50A)
QGE,GATECHARGE[nC]
VGE,G
ATE
-EMITTE
RVOLTAGE[V
]
0 20 40 60 80 100 1200
2
4
6
8
10
12
14
16130V520V
11
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APACITANCE[pF]
0 5 10 15 20 25 301
10
100
1000
1E+4Cies
Coes
Cres
Figure 18. IGBTtransientthermalresistance(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIENTTH
ERMALRESISTA
NCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.16218848.6E-4
20.22782660.01112208
30.1099850.09568113
13
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
14
IGW50N65F5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-04
RevisionHistory
IGW50N65F5
Revision:2015-05-04,Rev.2.1Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet
1.2 2013-12-16 New Marking Pattern
2.1 2015-05-04 Final data sheet
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