15 kV
SEM‐EDS
e‐
beam
1 μ
0.5 μ
15 kV
electron
s travel
~1 μ
into
sample
5kV
electron
s travel
~0.5 μ
into
sample
EDS X‐rays
EDS X‐rays
10 kV
Auger
e‐be
am
5 kV
SEM‐EDS
e‐
beam
Vacuum
Sample
XPS
electron
s
20 μ wide XP
S X‐ray Beam
surface
near‐surface
bulk
Auger
electron
s
Alum
inum
X‐rays (1
.5 kV)
travel
~3 μ
into sam
ple
1‐6 nm
1‐12
nm
1 μ
1,000 nm
0.1 μ 100
nm
0.01
μ 10
nm
4 μ
4,000 nm
EDS
X‐rays
B. Vincent Crist ©
2012
Insulator S
urvey*
Atom
%Ch
emical States
Insulators
Info Dep
th (Z)
Smallest XY Size
Dam
age du
ring an
alysis
Auger
10‐18 min
+/‐20%
some
possible, takes time
1‐6 nm
20 nm (0.02
um)
Possible (1
0 kV
electrons)
EDS (SEM
)11
‐17 min
+/‐10%
none
possible (20
nm Au)
>500
nm
800 nm
(0.80
um)
Possible (5
‐25 kV
electrons)
XPS
8‐15
min
+/‐10%
man
yEasy
1‐12
nm
30,000
(30
.0 um)
Rare (1.5 kV
X‐rays)
ASK Cu
stom
er: Z size ? (d
epth/height o
f defect), XY size ? (p
lana
r size of defect), insulator o
r con
ductor ?, ne
edchem
ical states ?
*Tim
e ne
eded
to cut sa
mple, (gold coat 4 SEM
= 5 m
in), mou
nt, pum
p do
wn, locate defect, setup, collect, analyze, rem
ove sample
ww
w.n
anol
ab1.
com
1708
McC
arth
y R
dM
ilpita
s, C
ATe
l 1-4
08-4
33-3
320
