Dodavatel:GM electronic, spol. s r.o. Igimt 55 /64 .. …Dodavatel:GM electronic, spol. s r.o. Igimt...

Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8zákaznická linka: 840 50 60 70 | www.gme.cz

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DATA SHEET

Product specificationSupersedes data of 1999 May 18

2003 Apr 10

BZX84 seriesVoltage regulator diodes

book, halfpage

M3D088

str 2 www.gme.cz


technický list

noitacfiiceps tcudorP

seires 48XZBsedoid rotaluger egatloV

FEATURES

• Total power dissipation: max. 250 mW• Three tolerance series: ±1%, ±2% and approx. ±5%• Working voltage range: nom. 2.4 to 75 V (E24 range)• Non-repetitive peak reverse power dissipation:

max. 40 W.

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in small SOT23plastic SMD packages.

The diodes are available in the normalized E24 ±1%(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)tolerance range. The series consists of 37 types withnominal working voltages from 2.4 to 75 V.

PINNING

PIN DESCRIPTION1 anode2 not connected3 cathode

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM243

2n.c. 1

3

2 1

3Top view


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Product specification


MARKING

Note1. = p : Made in Hong Kong.

= t : Made in Malaysia. = W : Made in China.

TYPENUMBER

MARKINGCODE(1)

TYPENUMBER

MARKINGCODE(1)

TYPENUMBER

MARKINGCODE(1)

TYPENUMBER

MARKINGCODE(1)

Marking codes for BZX84-A2V4 to BZX84-A75BZX84-A2V4 Y50 or 50 BZX84-A6V2 Y60 or 60 BZX84-A16 Y70 BZX84-A43 Y80 or C5BZX84-A2V7 Y51 or 51 BZX84-A6V8 Y61 or 61 BZX84-A18 Y71 BZX84-A47 Y81BZX84-A3V0 Y52 or 52 BZX84-A7V5 Y62 or 62 BZX84-A20 Y72 or C2 BZX84-A51 Y82 or C6BZX84-A3V3 Y53 BZX84-A8V2 Y63 or 63 BZX84-A22 Y73 BZX84-A56 Y83BZX84-A3V6 Y54 or C1 BZX84-A9V1 Y64 or 64 BZX84-A24 Y74 BZX84-A62 Y84BZX84-A3V9 Y55 or 55 BZX84-A10 Y65 or 65 BZX84-A27 Y75 or 75 BZX84-A68 Y85BZX84-A4V3 Y56 or 56 BZX84-A11 Y66 or 04 BZX84-A30 Y76 BZX84-A75 Y86 or 86BZX84-A4V7 Y57 or 57 BZX84-A12 Y67 or 67 BZX84-A33 Y77 − −

BZX84-A5V1 Y58 or 58 BZX84-A13 Y68 or C0 BZX84-A36 Y78 or C3 − −

BZX84-A5V6 Y59 or 59 BZX84-A15 Y69 or 69 BZX84-A39 Y79 or C4 − −

Marking codes for BZX84-B2V4 to BZX84-B75BZX84-B2V4 Z50 or Z0 BZX84-B6V2 Z60 or R5 BZX84-B16 Z70 or 70 BZX84-B43 Z80 or S5BZX84-B2V7 Z51 or Z1 BZX84-B6V8 Z61 or R6 BZX84-B18 Z71 or 71 BZX84-B47 Z81 or S6BZX84-B3V0 Z52 or S1 BZX84-B7V5 Z62 or R8 BZX84-B20 Z72 or 72 BZX84-B51 Z82 or S9BZX84-B3V3 Z53 or S2 BZX84-B8V2 Z63 or R9 BZX84-B22 Z73 or 73 BZX84-B56 Z83 or R0BZX84-B3V6 Z54 or S3 BZX84-B9V1 Z64 or T1 BZX84-B24 Z74 or 74 BZX84-B62 Z84 or R3BZX84-B3V9 Z55 or S4 BZX84-B10 Z65 or 66 BZX84-B27 Z75 or Z5 BZX84-B68 Z85 or R4BZX84-B4V3 Z56 or S7 BZX84-B11 Z66 or Z6 BZX84-B30 Z76 or Z4 BZX84-B75 Z86 or R7BZX84-B4V7 Z57 or S8 BZX84-B12 Z67 or Z7 BZX84-B33 Z77 or Y1 − −

BZX84-B5V1 Z58 or R1 BZX84-B13 Z68 or Z8 BZX84-B36 Z78 or Y2 − −

BZX84-B5V6 Z59 or R2 BZX84-B15 Z69 or Z9 BZX84-B39 Z79 or S0 − −

Marking codes for BZX84-C2V4 to BZX84-C75BZX84-C2V4 Z11 or T3 BZX84-C6V2 Z4 BZX84-C16 Y5 BZX84-C43 Y15 or B4BZX84-C2V7 Z12 or T4 BZX84-C6V8 Z5 BZX84-C18 Y6 BZX84-C47 Y16 or B5BZX84-C3V0 Z13 or T9 BZX84-C7V5 Z6 BZX84-C20 Y7 BZX84-C51 Y17 or B7BZX84-C3V3 Z14 or B1 BZX84-C8V2 Z7 BZX84-C22 Y8 BZX84-C56 Y18 or B8BZX84-C3V6 Z15 or B2 BZX84-C9V1 Z8 BZX84-C24 Y9 BZX84-C62 Y19 or B9BZX84-C3V9 Z16 or B3 BZX84-C10 Z9 BZX84-C27 Y10 or T2 BZX84-C68 Y20 or B0BZX84-C4V3 Z17 or B6 BZX84-C11 Y1 BZX84-C30 Y11 or T5 BZX84-C75 Y21 or A1BZX84-C4V7 Z1 BZX84-C12 Y2 BZX84-C33 Y12 or T6 − −

BZX84-C5V1 Z2 BZX84-C13 Y3 BZX84-C36 Y13 or T7 − −

BZX84-C5V6 Z3 BZX84-C15 Y4 BZX84-C39 Y14 or T8 − −


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LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).

Note1. Device mounted on an FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

Total BZX84-A and B and C seriesTj = 25 °C unless otherwise specified.

TINU.XAM.NIMSNOITIDNOCRETEMARAPLOBMYSIF continuous forward current − 200 mAIZSM non-repetitive peak reverse current tp = 100 µs; square wave;

Tj = 25 °C prior to surgesee Tables1 and 2

Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mWPZSM non-repetitive peak reverse power

dissipationtp = 100 µs; square wave;Tj = 25 °C prior to surge; see Fig.2

− 40 W

Tstg storage temperature −65 +150 °CTj junction temperature −65 +150 °C

TINU.XAMSNOITIDNOCRETEMARAPLOBMYSVF forward voltage IF = 10 mA; see Fig.3 0.9 VIR reverse current

BZX84-A/B/C2V4 VR 05V1= µABZX84-A/B/C2V7 VR 02V1= µABZX84-A/B/C3V0 VR 01V1= µABZX84-A/B/C3V3 VR 5V1= µABZX84-A/B/C3V6 VR 5V1= µABZX84-A/B/C3V9 VR 3V1= µABZX84-A/B/C4V3 VR 3V1= µABZX84-A/B/C4V7 VR 3V2= µABZX84-A/B/C5V1 VR 2V2= µABZX84-A/B/C5V6 VR 1V2= µABZX84-A/B/C6V2 VR 3V4= µABZX84-A/B/C6V8 VR 2V4= µABZX84-A/B/C7V5 VR 1V5= µABZX84-A/B/C8V2 VR An007V5=BZX84-A/B/C9V1 VR An005V6=BZX84-A/B/C10 VR An002V7=BZX84-A/B/C11 VR An001V8=BZX84-A/B/C12 VR An001V8=BZX84-A/B/C13 VR An001V8=BZX84-A/B/C15 to 75 VR = 0.7VZnom 50 nA


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whi

teto

forc

ela

ndsc

ape

page

sto

bero

tate

dco

rrec

tlyw

hen

brow

sing

thro

ugh

the

pdfi

nth

eA

crob

atre

ader

.whi

teto

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ela

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ape

page

sto

be...

Tabl

e 1

Per t

ype

BZX

84-A

/B/C

2V4

toA

/B/C

24T j

=25

°C u

nles

s ot

herw

ise

spec

ified

.

BZX

84-

Axx

xB

xxx

Cxx

x

WO

RK

ING

VO

LTAG

EV Z

(V)

atI Z

test

=5

mA

DIF

FER

ENTI

AL

RES

ISTA

NC

Er d

if(Ω

)

TEM

P. C

OEF

F.S Z

(mV/

K)

atI Z

test

=5

mA

(see

Figs

4 an

d5)

DIO

DE

CA

P.C

d(p

F)at

f=1

MH

z;V R

=0

V

NO

N-R

EPET

ITIV

EPE

AK

REV

ERSE

CU

RR

ENT

I ZSM

(A)

at t p

=10

0µs

;T a

mb

=25

°CTo

l.±1

%(A

)To

l.±2

%(B

)To

l. ap

prox

.±5

%(C

)at

I Zte

st=

1m

Aat

I Zte

st=

5m

A

MIN

.M

AX.

MIN

.M

AX.

MIN

.M

AX.

TYP.

MA

X.TY

P.M

AX.

MIN

.TY

P.M

AX.

MA

X.M

AX.

2V4

2.37

2.43

2.35

2.45

2.2

2.6

275

600

7010

0−3

.5−1

.60

450

6.0

2V7

2.67

2.73

2.65

2.75

2.5

2.9

300

600

7510

0−3

.5−2

.00

450

6.0

3V0

2.97

3.03

2.94

3.06

2.8

3.2

325

600

8095

−3.5

−2.1

045

06.

03V

33.

263.

343.

233.

373.

13.

535

060

085

95−3

.5−2

.40

450

6.0

3V6

3.56

3.64

3.53

3.67

3.4

3.8

375

600

8590

−3.5

−2.4

045

06.

03V

93.

863.

943.

823.

983.

74.

140

060

085

90−3

.5−2

.50

450

6.0

4V3

4.25

4.35

4.21

4.39

4.0

4.6

410

600

8090

−3.5

−2.5

045

06.

04V

74.

654.

754.

614.

794.

45.

042

550

050

80−3

.5−1

.40.

230

06.

05V

15.

045.

165.

005.

204.

85.

440

048

040

60−2

.7−0

.81.

230

06.

05V

65.

545.

665.

495.

715.

26.

080

400

1540

−2.0

1.2

2.5

300

6.0

6V2

6.13

6.27

6.08

6.32

5.8

6.6

4015

06

100.

42.

33.

720

06.

06V

86.

736.

876.

666.

946.

47.

230

806

151.

23.

04.

520

06.

07V

57.

427.

587.

357.

657.

07.

930

806

152.

54.

05.

315

04.

08V

28.

118.

298.

048.

367.

78.

740

806

153.

24.

66.

215

04.

09V

19.

009.

208.

929.

288.

59.

640

100

615

3.8

5.5

7.0

150

3.0

109.

9010

.10

9.80

10.2

09.

410

.650

150

820

4.5

6.4

8.0

903.

011

10.8

011

.11

10.8

011

.20

10.4

11.6

5015

010

205.

47.

49.

085

2.5

1211

.88

12.1

211

.80

12.2

011

.412

.750

150

1025

6.0

8.4

10.0

852.

513

12.8

713

.13

12.7

013

.30

12.4

14.1

5017

010

307.

09.

411

.080

2.5

1514

.85

15.1

514

.70

15.3

013

.815

.650

200

1030

9.2

11.4

13.0

752.

016

15.8

416

.16

15.7

016

.30

15.3

17.1

5020

010

4010

.412

.414

.075

1.5

1817

.82

18.1

817

.60

18.4

016

.819

.150

225

1045

12.4

14.4

16.0

701.

520

19.8

020

.20

19.6

020

.40

18.8

21.2

6022

515

5514

.416

.418

.060

1.5

2221

.78

22.2

221

.60

22.4

020

.823

.360

250

2055

16.4

18.4

20.0

601.

2524

23.7

624

.24

23.5

024

.50

22.8

25.6

6025

025

7018

.420

.422

.055

1.25


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Tabl

e 2

Per t

ype

BZX

84-A

/B/C

27to

A/B

/C75

T j=

25°C

unl

ess

othe

rwis

e sp

ecifi

ed.

BZX

84-

Axx

xB

xxx

Cxx

x

WO

RK

ING

VO

LTAG

EV Z

(V)

atI Z

test

=2

mA

DIF

FER

ENTI

AL

RES

ISTA

NC

Er d

if(Ω

)

TEM

P. C

OEF

F.S Z

(mV/

K)

atI Z

test

=2

mA

(see

Figs

4 an

d5)

DIO

DE

CA

P.C

d(p

F)at

f=1

MH

z;V R

=0

V

NO

N-R

EPET

ITIV

EPE

AK

REV

ERSE

CU

RR

ENT

I ZSM

(A)

att p

=10

0µs

;T a

mb

=25

°CTo

l.±1

%(A

)To

l.±2

%(B

)To

l. ap

prox

.±5

%(C

)at

I Zte

st=

0.5

mA

atI Z

test

=2

mA

MIN

.M

AX.

MIN

.M

AX.

MIN

.M

AX.

TYP.

MA

X.TY

P.M

AX.

MIN

.TY

P.M

AX.

MA

X.M

AX.

2726

.73

27.2

726

.50

27.5

025

.128

.965

300

2580

21.4

23.4

25.3

501.

030

29.7

030

.30

29.4

030

.60

28.0

32.0

7030

030

8024

.426

.629

.450

1.0

3332

.67

33.3

332

.30

33.7

031

.035

.075

325

3580

27.4

29.7

33.4

450.

936

35.6

436

.36

35.3

036

.70

34.0

38.0

8035

035

9030

.433

.037

.445

0.8

3938

.61

39.3

938

.20

39.8

037

.041

.080

350

4013

033

.436

.441

.245

0.7

4342

.57

43.4

342

.10

43.9

040

.046

.085

375

4515

037

.641

.246

.640

0.6

4746

.53

47.4

746

.10

47.9

044

.050

.085

375

5017

042

.046

.151

.840

0.5

5150

.49

51.5

150

.00

52.0

048

.054

.090

400

6018

046

.651

.057

.240

0.4

5655

.44

56.5

654

.90

57.1

052

.060

.010

042

570

200

52.2

57.0

63.8

400.

362

61.3

862

.62

60.8

063

.20

58.0

66.0

120

450

8021

558

.864

.471

.635

0.3

6867

.32

68.6

866

.60

69.4

064

.072

.015

047

590

240

65.6

71.7

79.8

350.

2575

74.2

575

.75

73.5

076

.50

70.0

79.0

170

500

9525

573

.480

.288

.635

0.2


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THERMAL CHARACTERISTICS

Note1. Device mounted on an FR4 printed circuit-board.

TINUEULAVSNOITIDNOCRETEMARAPLOBMYSRth j-tp W/K033tniop-eit ot noitcnuj morf ecnatsiser lamrehtRth j-a W/K0051etontneibma ot noitcnuj morf ecnatsiser lamreht


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GRAPHICAL DATA

Fig.2 Maximum permissible non-repetitive peakreverse power dissipation versus duration.

handbook, halfpageMBG801

103

1 duration (ms)

PZSM(W)

10

102

10−1

10

1

(1)

(2)

(1) Tj = 25 °C (prior to surge).(2) Tj = 150 °C (prior to surge).

Fig.3 Forward current as a function of forwardvoltage; typical values.

handbook, halfpage

16.0

300

100

0

200

MBG781

0.8 VF (V)

IF(mA)

Tj = 25 °C.

Fig.4 Temperature coefficient as a function ofworking current; typical values.

handbook, halfpage

060

0

−2

−3

−1

MBG783

20 40 IZ (mA)

SZ(mV/K) 4V3

3V9

3V6

3V0

2V42V7

3V3

BZX84-A/B/C2V4 to A/B/C4V3.Tj = 25 to 150 °C.

Fig.5 Temperature coefficient as a function ofworking current; typical values.

handbook, halfpage

020 16

10

0

−5

5

MBG782

4 8 12IZ (mA)

SZ(mV/K)

4V7

12

11

109V18V27V56V8

6V25V65V1

BZX84-A/B/C4V7 to A/B/C12.Tj = 25 to 150 °C.


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PACKAGE OUTLINE

UNITA1

max. bp c D E e1 HE Lp Q wv

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

97-02-2899-09-13

IEC JEDEC EIAJ

mm 0.1 0.480.38

0.150.09

3.02.8

1.41.2 0.95

e

1.9 2.52.1

0.550.45 0.10.2

DIMENSIONS (mm are the original dimensions)

0.450.15

BA632-OT32TOS

bp

D

e1

e

A

A1

Lp

Q

detail X

HE

E

w M

v M A

B

AB

0 1 2 mm

scale

A

1.10.9

c

X

21

3

32TOSsdael 3 ;egakcap detnuom ecafrus citsalP


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DATA SHEET STATUS

Notes1. Please consult the most recently issued data sheet before initiating or completing a design.2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEETSTATUS(1)

PRODUCTSTATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.

III Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Relevant changes willbe communicated via a Customer Product/Process Change Notification(CPCN).

DEFINITIONS

Short-form specification The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.

Limiting values definition Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.

Application information Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.

DISCLAIMERS

Life support applications These products are notdesigned for use in life support appliances, devices, orsystems where malfunction of these products canreasonably be expected to result in personal injury. PhilipsSemiconductors customers using or selling these productsfor use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for anydamages resulting from such application.

Right to make changes Philips Semiconductorsreserves the right to make changes in the products -including circuits, standard cells, and/or software -described or contained herein in order to improve designand/or performance. When the product is in full production(status ‘Production’), relevant changes will becommunicated via a Customer Product/Process ChangeNotification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of theseproducts, conveys no licence or title under any patent,copyright, or mask work right to these products, andmakes no representations or warranties that theseproducts are free from patent, copyright, or mask workright infringement, unless otherwise specified.


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NOTES

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